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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

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Name: D882S NPN Tip Power Transistors TO92 Plastic Encapsulated Transistors
Brand: Hua Xuan Yang
Price: 1 USD

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TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN)

FEATURE

Power dissipation

MARKING

D882=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE, XXX=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Para meter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	30	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	3	A
P_D	Collector Power Dissipation	625	mW
R0 JA	Thermal Resist ance f rom Junction to Ambient	200	Š / W
T_j	Junction Temperature	150	Š
Tstg	St orage Temperature	-55 ~+150	Š

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C = 100µA, I_E=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C = 10mA, I_B=0	30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 100µA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB= 40V, I_E=0			1	μA
Collector cut-off current	ICEO	V_CE= 30V, I_B=0			10	μA
Emitter cut-off current	IEBO	V_EB= 6V, I_C=0			1	μA
DC current gain	hFE	V_CE=2V, I_C= 1A	60		400
Collector-emitter saturation voltage	VCE(sat)	I_C= 2A, I_B= 0.2 A			0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C= 2A, I_B= 0.2 A			1.5	V
Transition frequency	f_T	V_CE= 5V , Ic=0.1A f =10MHz	50	80		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

Package Outline Dimensions

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