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A92 High Current NPN Transistor , High Power NPN Silicon Transistor

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Name: A92 High Current NPN Transistor High Power NPN Silicon Transistor
Brand: Hua Xuan Yang
Price: 1 USD

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SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :A92

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-310	V
VCEO	Collector-Emitter Voltage	-305	V
VEBO	Emitter-Base Voltage	-5	V
I_C	Collector Current- Continuous	-200	mA
ICM	Collector Current -Pulsed	-500	mA
P_C	Collector Power Dissipation	500	mW
RθJA	Thermal Resistance from Junction to Ambient	250	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100µA,I_E=0	-310			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=-1mA,I_B=0	-305			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100µA,I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-200V,I_E=0			-0.25	µA
	ICEO	V_CE=-200V,I_B=0			-0.25	µA
		V_CE=-300V,I_B=0			-5	µA
Emitter cut-off current	IEBO	V_EB=-5V,I_C=0			-0.1	µA
DC current gain	hFE(1)	V_CE=-10V, I_C=-1mA	60
	hFE(2)	V_CE=-10V, I_C=-10mA	100		300
	hFE(3)	V_CE=-10V, I_C=-80mA	60
Collector-emitter saturation voltage	VCE(sat)	I_C=-20mA,I_B=-2mA			-0.2	V
Base-emitter saturation voltage	VBE(sat)	I_C=-20mA,I_B=-2mA			-0.9	V
Transition frequency	f_T	V_CE=-20V,I_C=-10mA,f=30MHz	50			MHz

Typical Characteristics

Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

SOT-89-3L Tape and Reel

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