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AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

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AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

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Brand Name :	Original
Model Number :	AP2602GY-HF
Certification :	RoHS、SGS
Price :	Negotiable
Payment Terms :	T/T, Western Union
Supply Ability :	10,000PCS/MONTH
Delivery Time :	4~5 week

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AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

( Electronic Components ) New AP2602GY-HF integrated circuits

Description

AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The SOT-26 package is widely used for all commercial-industrial applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+12	V
I_D@T_A=25℃	Drain Current³, V_GS @ 4.5V	6.3	A
I_D@T_A=70℃	Drain Current³, V_GS @ 4.5V	5	A
IDM	Pulsed Drain Current¹	30	A
P_D@T_A=25℃	Total Power Dissipation	2	W
	Linear Derating Factor	0.016	W/℃
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	62.5	℃/W

AP2602GY-H

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
ΔBV_DSS/ΔT_j	Breakdown Voltage Temperature Coefficient	Reference to 25℃, I_D=1mA	-	0.1	-	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=10V, I_D=5.5A	-	-	30	mΩ
		V_GS=4.5V, I_D=5.3A	-	-	34	mΩ
		V_GS=2.5V, I_D=2.6A	-	-	50	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.5	0.85	1.2	V
gfs	Forward Transconductance	V_DS=5V, I_D=5.3A	-	13	-	S
IDSS	Drain-Source Leakage Current	V_DS=20V, V_GS=0V	-	-	1	uA
IDSS	Drain-Source Leakage Current (T_j=55^oC)	V_DS=16V ,V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+12V, V_DS=0V	-	-	+100	nA
Q_g	Total Gate Charge²	I_D=5.3A V_DS=10V V_GS=4.5V	-	8.7	16	nC
Qgs	Gate-Source Charge		-	1.5	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	3.6	-	nC
td(on)	Turn-on Delay Time²	V_DS=15V	-	6	-	ns
t_r	Rise Time	I_D=1A	-	14	-	ns
td(off)	Turn-off Delay Time	R_G=2Ω	-	18.4	-	ns
t_f	Fall Time	V_GS=10V	-	2.8	-	ns
Ciss	Input Capacitance	V_GS=0V V_DS=15V f=1.0MHz	-	603	1085	pF
Coss	Output Capacitance		-	144	-	pF
Crss	Reverse Transfer Capacitance		-	111	-	pF

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=1.2A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time²	I_S=5A, V_GS=0V, dI/dt=100A/µs	-	16.8	-	ns
Qrr	Reverse Recovery Charge	I_S=5A, V_GS=0V, dI/dt=100A/µs	-	11	-	nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in² copper pad of FR4 board, t < 10s ; 156℃/W when mounted on min. copper pad.

Thanks to choose our product extremely.We will provide you with the best quality and most cost-effective products.Our aim is to perfect the product quality for a long-time business.So, please rest assured to choose, please contact us if have any questions.

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