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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

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Brand Name :	Hua Xuan Yang
Model Number :	AP2308GEN
Certification :	RoHS、SGS
Price :	Negotiable
Payment Terms :	L/C T/T Western Union
Supply Ability :	10,000/Month
Delivery Time :	4~5 week

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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device.

The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Drain Current³, V_GS @ 4.5V	1.2	A
I_D@T_A=70℃	Drain Current³, V_GS @ 4.5V	1	A
IDM	Pulsed Drain Current¹	3.6	A
P_D@T_A=25℃	Total Power Dissipation	0.69	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	180	℃/W

AP2308GE

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=1.2A	-	-	600	mΩ
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=2.5V, I_D=0.3A	-	-	2	Ω
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.5	-	1.25	V
gfs	Forward Transconductance	V_DS=5V, I_D=1.2A	-	1	-	S
IDSS	Drain-Source Leakage Current	V_DS=20V, V_GS=0V	-	-	1	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+30	uA
Q_g	Total Gate Charge	I_D=1.2A V_DS=16V V_GS=4.5V	-	1.2	2	nC
Qgs	Gate-Source Charge		-	0.4	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	0.3	-	nC
td(on)	Turn-on Delay Time	V_DS=10V I_D=1.2A R_G=3.3Ω V_GS=5V	-	17	-	ns
t_r	Rise Time		-	36	-	ns
td(off)	Turn-off Delay Time		-	76	-	ns
t_f	Fall Time		-	73	-	ns
Ciss	Input Capacitance	V_GS=0V .V_D_S=10V f=1.0MHz	-	37	60	pF
Coss	Output Capacitance		-	17	-	pF
Crss	Reverse Transfer Capacitance		-	13	-	pF

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=1.2A, V_GS=0V	-	-	1.2	V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in² copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad.

Items:New AP2308GEN

Part number: AP2308GEN

Package: Electronic components

Electronic Components: AP2308GEN

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