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A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

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Name: A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type
Brand: Hua Xuan Yang
Price: 1 USD

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TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

FEATURE

High Breakdown Voltage

MARKING

A94=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Coll ector-Base Voltage	-400	V
VCEO	Coll ector-Emitter Voltage	-400	V
VEBO	Emitter-Base Voltage	-5	V
I_C	Coll ector Current -Continuous	-0.2	A
ICM	Coll ector Current -Pulsed	-0.3	A
P_C	Coll ector Power Dissipation	625	mW
RθJA	Thermal Resist ance From Junction To ambient	200	℃ /W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100µA,I_E=0	-400			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=-1mA,I_B=0	-400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100µA,I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-400V,I_E=0			-0.1	μA
Collector cut-off current	ICEO	V_CE=-400V,I_B=0			-5	μA
Emitter cut-off current	IEBO	V_EB=-4V,I_C=0			-0.1	μA
DC current gain	hFE(1)	V_CE=-10V, I_C=-10mA	80		300
	hFE(2)	V_CE=-10V, I_C=-1mA	70
	hFE(3)	V_CE=-10V, I_C=-100mA	60
	hFE(4)	V_CE=-10V, I_C=-50mA	80
Collector-emitter saturation voltage	VCE(sat)(1)	I_C=-10mA,I_B=-1mA			-0.2	V
Collector-emitter saturation voltage	VCE(sat)(2)	I_C=-50mA,I_B=-5mA			-0.3	V
Base-emitter saturation voltage	VBE(sat)	I_C=-10mA,I_B=-1mA			-0.75	V
Transition frequency	f_T	V_CE=-20V, I_C=-10mA,f=30MHz	50			MHz

CLASSIFICATION OF h_FE(2)

RANK	A	B	C
RANGE	80-100	100-200	200-300

Typical Characteristics

Package Outline Dimensions

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