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Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

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Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

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Brand Name :	Hua Xuan Yang
Model Number :	6N60
Certification :	RoHS、SGS
Price :	Negotiated
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Delivery Time :	1 - 2 Weeks

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Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

FEATURES

R_DS(ON) < 1.75Ω @ V_GS = 10V, I_D = 3.1A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free		1	2	3
6N60ZL-TF3-T	6N60ZG-TF3-T	TO-220F	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±20	V
Avalanche Current (Note 2)		IAR	6.2	A
Continuous Drain Current		I_D	6.2	A
Pulsed Drain Current (Note 2)		IDM	24.8	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	252	mJ
Avalanche Energy	Repetitive (Note 2)	EAR	13	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	ns
Power Dissipation		P_D	40	W
Junction Temperature		T_J	+150	°C
Operating Temperature		TOPR	-55 ~ +150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

THERMAL DATA

PARAMETER	SYMBOL	RATING	UNIT
Junction to Ambient	θJA	62.5	°C/W
Junction to Case	θJC	3.2	°C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS = 0V, I_D = 250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS = 600V, V_GS = 0V			10	μA
Drain-Source Leakage Current		IDSS	V_DS = 480V, V_GS = 0V, T_J=125°C			100	μA
Gate- Source Leakage Current	Forward	IGSS	V_GS = 20V, V_DS = 0V			10	μA
Gate- Source Leakage Current	Reverse	IGSS	V_GS = -20V, V_DS = 0V			-10	μA
Breakdown Voltage Temperature Coefficient		△BV_DSS/△T_J	I_D=250μA, Referenced to 25°C		0.53		V/°C
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS = V_GS, I_D = 250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS = 10V, I_D = 3.1A		1.4	1.75	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_DS=25V, V_GS=0V, f=1.0 MHz		770	1000	pF
Output Capacitance		COSS			95	120	pF
Reverse Transfer Capacitance		CRSS			10	13	pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time		tD(ON)	V_GS=0~10V, V_DD=30V, I_D =0.5A, R_G =25Ω (Note 1, 2)		45	60	ns
Turn-On Rise Time		t_R			95	110	ns
Turn-Off Delay Time		tD(OFF)			185	200	ns
Turn-Off Fall Time		t_F			110	125	ns
Total Gate Charge		Q_G	V_GS=10V, V_DD=50V, I_D=1.3A I_G=100μA (Note 1, 2)		32.8		nC
Gate-Source Charge		QGS			7.0		nC
Gate-Drain Charge		QGD			9.8		nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage		VSD	V_GS = 0 V, I_S = 6.2 A			1.4	V
Maximum Continuous Drain-Source Diode Forward Current		I_S				6.2	A
Maximum Pulsed Drain-Source Diode Forward Current		ISM				24.8	A
Reverse Recovery Time		trr	V_GS = 0 V, I_S = 6.2 A, dI_F/dt = 100 A/μs (Note 1)		290		ns
Reverse Recovery Charge		QRR	V_GS = 0 V, I_S = 6.2 A, dI_F/dt = 100 A/μs (Note 1)		2.35		μC

Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

DESCRIPTION

ORDERING INFORMATION

THERMAL DATA

n channel mosfet transistor

high voltage transistor

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking