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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

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Brand Name :	Hua Xuan Yang
Model Number :	AP1334GEU-HF
Certification :	RoHS、SGS
Price :	Negotiate
Payment Terms :	T/T, Western Union, L/C
Supply Ability :	10,000/Month
Delivery Time :	4~5 week

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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Electronic component AP1334GEU-HF advantage price for original stock

Description

AP1334 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

Absolute Maximum Ratings@T_j=25^oC.(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Drain Current³, V_GS @ 4.5V	2.1	A
I_D@T_A=70℃	Drain Current³, V_GS @ 4.5V	1.7	A
IDM	Pulsed Drain Current¹	8	A
P_D@T_A=25℃	Total Power Dissipation	0.35	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	360	℃/W

AP1334GEU-H

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=2A	-	-	65	mΩ
		V_GS=2.5V, I_D=1.5A	-	-	75	mΩ
		V_GS=1.8V, I_D=1A	-	-	85	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.3	-	1	V
gfs	Forward Transconductance	V_DS=5V, I_D=2A	-	12	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+30	uA
Q_g	Total Gate Charge	I_D=2A V_DS=10V V_GS=4.5V	-	9	14.4	nC
Qgs	Gate-Source Charge		-	1	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	2.5	-	nC
td(on)	Turn-on Delay Time	V_DS=10V I_D=1A R_G=3.3Ω V_GS=5V	-	6	-	ns
t_r	Rise Time		-	7	-	ns
td(off)	Turn-off Delay Time		-	18	-	ns
t_f	Fall Time		-	3	-	ns
Ciss	Input Capacitance	V_G.S=0V V_DS=10V f=1.0MHz	-	570	912	pF
Coss	Output Capacitance		-	70	-	pF
Crss	Reverse Transfer Capacitance		-	60	-	pF
R_g	Gate Resistance	f=1.0MHz	-	2.4	4.8	Ω

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=1.2A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time	I_S=2A, V_GS=0V, dI/dt=100A/µs	-	14	-	ns
Qrr	Reverse Recovery Charge	I_S=2A, V_GS=0V, dI/dt=100A/µs	-	7	-	nC

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on FR4 board, t ≦ 10 sec.

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