AP6H03S Mosfet Driver Using Transistor , Durable High Amp
Transistor
Mosfet Driver Using Transistor Description:
The AP6H03Suses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a
level shifted high side switch, and for a host of other
applications
Mosfet Driver Using Transistor Features
N-Channel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
NChannel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Mosfet Driver Using Transistor Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP6H03S | SOP-8 | AP6H03S YYWWWW | 3000 |
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Sou rce Voltage | ±20 | V |
D I | Drain Current – Continuous (TC=25℃) | 7.5 | A |
| Drain Current – Continuous (TC=100℃) | 4.8 | A |
| IDM | Drain Current – Pulsed1 | 30 | A |
| EAS | Single Pulse Avalanche Energy 2 | 14 | mJ |
| IAS | Single Pulse Avalanched Current 2 | 17 | A |
PD | Power Dissipation (TC=25℃) | 2.1 | W |
| Power Dissipation – Derate above 25℃ | 0.017 | W/℃ |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Sou rce Voltage | ±20 | V |
D I | Drain Current – Continuous (TC=25℃) | 7.5 | A |
| Drain Current – Continuous (TC=100℃) | 4.8 | A |
| IDM | Drain Current – Pulsed1 | 30 | A |
| EAS | Single Pulse Avalanche Energy 2 | 14 | mJ |
| IAS | Single Pulse Avalanched Current 2 | 17 | A |
PD | Power Dissipation (TC=25℃) | 2.1 | W |
| Power Dissipation – Derate above 25℃ | 0.017 | W/℃ |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Characteristics
| Symbol | Parameter | Typ. | Max. | Unit |
| RθJA | Thermal Resistance Junction to ambient | --- | 60 | ℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △ BVDSS/△ TJ | BVDSS Temperature Coefficient | Reference to 25℃•, ID=1mA | --- | 0.04 | --- | V/℃ |
IDSS |
Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=125℃ | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=± 20V , VDS=0V | --- | --- | ± 100 | nA |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △ BVDSS/△ TJ | BVDSS Temperature Coefficient | Reference to 25℃•, ID=1mA | --- | 0.04 | --- | V/℃ |
IDSS |
Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=125℃ | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=± 20V , VDS=0V | --- | --- | ± 100 | nA |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=6A | --- | 15 | 20 | mΩ |
| VGS=4.5V , ID=3A | --- | 23 | 30 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , I =250uA | 1.2 | 1.5 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -4 | --- | mV/℃ |
| gfs | Forward Transconductance | VDS=10V , I D=6A | --- | 13 | --- | S |
| Qg | Total Gate Charge3 , 4 | | --- | 4.1 | 8 | |
| Qgs | Gate-Source Charge 3 , 4 | --- | 1 | 2 |
| Qgd | Gate-Drain Charge | --- | 2.1 | 4 |
| Td(on) | Turn-On Delay Time 3 , 4 | | --- | 2.6 | 5 | |
| Tr | Rise Time | --- | 7.2 | 14 |
| Td(off) | Turn-Off Delay Time 3 , 4 | --- | 15.8 | 30 |
| Tf | Fall Time 3 , 4 | --- | 4.6 | 9 |
| Ciss | Input Capacitance | | --- | 345 | 500 | |
| Coss | Output Capacitance | --- | 55 | 80 |
| Crss | Reverse Transfer Capacitance | --- | 32 | 55 |
| Rg | Gate resistance | VGS=0V, VDS=0V, f=1MHz | --- | 3.2 | 6.4 | Ω |
| IS | Continuous Source Current |
VG=VD=0V , Force Current | --- | --- | 7.5 | A |
| ISM | Pulsed Source Current | --- | --- | 30 | A |
| VSD | Diode Forward Voltage3 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
rr t | Reverse Recovery Time | VGS=0V,IS=1A , di/dt=100A/µs | --- | --- | --- | ns |
| Qrr | Reverse Recovery Charge | --- | --- | --- | nC |
| IS | Continuous Source Current |
VG=VD=0V , Force Current | --- | --- | 7.5 | A |
| ISM | Pulsed Source Current | --- | --- | 30 | A |
| VSD | Diode Forward Voltage3 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
rr t | Reverse Recovery Time | VGS=0V,IS=1A , di/dt=100A/µs | --- | --- | --- | ns |
| Qrr | Reverse Recovery Charge | --- | --- | --- | nC |
Reflow Soldering
The choice of heating method may be influenced by plastic QFP
package). If infrared or vapor phase heating is used and the
package is not absolutely dry (less than 0.1% moisture content by
weight), vaporization of the small amount of moisture in them can
cause cracking of the plastic body. Preheating is necessary to dry
the paste and evaporate the binding agent. Preheating duration: 45
minutes at 45 °C.
Reflow soldering requires solder paste (a suspension of fine solder
particles, flux and binding agent) to be applied to the
printed-circuit board by screen printing, stenciling or
pressure-syringe dispensing before package placement. Several
methods exist for reflowing; for example, convection or
convection/infrared heating in a conveyor type oven. Throughput
times (preheating, soldering and cooling) vary between 100 and 200
seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 270 °C depending
on solder paste material. The top-surface
temperature of the packages should preferable be kept below 245 °C
for thick/large packages (packages with a thickness
2.5 mm or with a volume 350 mm so called thick/large packages). The
top-surface temperature of the packages should preferable be kept
below 260 °C for thin/small packages (packages with a thickness
< 2.5 mm and a volume < 350 mm so called thin/small
packages).
| 1’st Ram Up Rate | max3.0+/-2 /sec | - |
| Preheat | 150 ~200 | 60~180 sec |
| 2’nd Ram Up | max3.0+/-2 /sec | - |
| Solder Joint | 217 above | 60~150 sec |
| Peak Temp | 260 +0/-5 | 20~40 sec |
| Ram Down rate | 6 /sec max | - |
Wave Soldering:
Conventional single wave soldering is not recommended for surface
mount devices (SMDs) or printed-circuit boards with a high
component density, as solder bridging and non-wetting can present
major problems.
Manual Soldering:
Fix the component by first soldering two diagonally-opposite end
leads. Use a low voltage (24 V or less) soldering iron applied to
the flat part of the lead. Contact time must be limited to 10
seconds at up to 300 °C. When using a dedicated tool, all other
leads can be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.
