High Cell Density Mosfet Power Transistor For Small Motor Control

Mosfet Power Transistor Description:

The AP8205A is the highest performance trench
N-ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the small power switching and
load switch applications. The meet the RoHS and
Product requirement with full function reliability approved.

Mosfet Power Transistor Features

VDS = 20V ID = 6A
RDS(ON) < 27mΩ @ VGS=4.5V
RDS(ON) <37mΩ @ VGS=2.5V

Mosfet Power Transistor Application

Battery protection
Uninterruptible power supply

Package Marking and Ordering Information

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Electrical Characteristics (TA=25 ℃unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Attention

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