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Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

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Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

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Brand Name :	Hua Xuan Yang
Model Number :	2N60- TO-220F
Certification :	RoHS、SGS
Price :	Negotiated
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Delivery Time :	1 - 2 Weeks

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Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F

Logic Level Transistor DESCRIPTION

The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Logic Level Transistor FEATURES

* RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A
* High Switching Speed

Logic Level Transistor SYMBOL

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free	Package	1	2	3	Packing
2N60L-TF1-T	2N60G-TF1-T	TO-220F1	G	D	S	Tube
2N60L-TF3-T	2N60G-TF3-T	TO-220F	G	D	S	Tube
2N60L-TM3-T	2N60G-TM3-T	TO-251	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	± 30	V
Drain Current	Continuous	ID	2	A
Drain Current	Pulsed (Note 2)	IDM	4	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	84	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	V/ns
Power Dissipation	TO-220F/TO-220F1	PD	23	W
Power Dissipation	TO-251	PD	44	W
Junction Temperature		TJ	+150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Repetitive Rating: Pulse width limited by maximum junction temperature.
L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER		SYMBOL	RATINGS	UNIT
Junction to Ambient	TO-220F/TO-220F1	θJA	62.5	°C/W
Junction to Ambient	TO-251	θJA	100	°C/W
Junction to Case	TO-220F/TO-220F1	θJC	5.5	°C/W
Junction to Case	TO-251	θJC	2.87	°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	VGS=0V, ID= 250μA	600			V
Drain-Source Leakage Current		IDSS	VDS=600V, VGS=0V			1	µA
Gate-Source Leakage Current	Forward	IGSS	VGS=30V, VDS=0V			100	nA
Gate-Source Leakage Current	Reverse	IGSS	VGS=-30V, VDS=0V			-100	nA
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	VDS=VGS, ID=250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	VGS=10V, ID=1.0A			7.0	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	VGS=0V, VDS=25V, f=1.0 MHz		190		pF
Output Capacitance		COSS			28		pF
Reverse Transfer Capacitance		CRSS			2		pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)		QG	VDS=200V, VGS=10V, ID=2.0A IG=1mA (Note 1, 2)		7		nC
Gateource Charge		QGS			2.9		nC
Gate-Drain Charge		QGD			1.9		nC
Turn-on Delay Time (Note 1)		tD(ON)	VDS=300V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2)		4		ns
Rise Time		tR			16		ns
Turn-off Delay Time		tD(OFF)			16		ns
Fall-Time		tF			19		ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current		IS				2	A
Maximum Body-Diode Pulsed Current		ISM				8	A
Drain-Source Diode Forward Voltage (Note 1)		VSD	VGS=0V, IS=2.0A			1.4	V
Reverse Recovery Time (Note 1)		trr	VGS=0V, IS=2.0A, dIF/dt=100A/µs (Note1)		232		ns
Reverse Recovery Charge		Qrr	VGS=0V, IS=2.0A, dIF/dt=100A/µs (Note1)		1.1		µC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Essentially independent of operating temperature.

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Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F