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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

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Brand Name :	Hua Xuan Yang
Certification :	RoHS、SGS
Price :	Negotiated
Delivery Time :	1 - 2 Weeks
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Model Number :	WSF6012

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Product Details
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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

QM4803D N-Ch and P-Channel MOSFET

Description

The WSF6012 is the highest performance

trench N-ch and P-ch MOSFET with extreme

high cell density , which provide excellent

RDSON and gate charge for most of the

synchronous buck converter applications .

The WSF6012 meet the RoHS and Green

Product requirement , 100% EAS

guaranteed with full function reliability

approved.

Features

z Advanced high cell density Trench technology

z Super Low Gate Charge

z Excellent CdV/dt effect decline

z 100% EAS Guaranteed

z Green Device Available

Applications

z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter

Product Summery

Absolute Maximum Ratings

Thermal Data

N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2

FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

N-Channel Typical Characteristics

P-Channel Typical Characteristics

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