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D965 NPN Transistor Circuit , NPN Power Transistor High Performance

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Name: D965 NPN Transistor Circuit NPN Power Transistor High Performance
Brand: Hua Xuan Yang
Price: 1 USD

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TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)

FEATURE

Ÿ Audio Amplifier

Ÿ Flash Unit of Camera

Ÿ Switching Circuit

MARKING

D965=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Para meter	Value	Unit
VCBO	Collector-Base Voltage	42	V
VCEO	Collector-Emitter Voltage	22	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	5	A
P_D	Collector Power Dissipation	750	mW
R0 JA	Thermal Resist ance f rom Junction to Ambient	166.7	Š / W
T_j	Junction Temperature	150	Š
Tstg	St orage Temperature	-55 ~+150	Š

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	I_C=0.1mA, I_E=0	42			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA, I_B=0	22			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 10µA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB=30V,I_E=0			0.1	µA
Emitter cut-off current	IEBO	V_EB=6V, I_C=0			0.1	µA
DC current gain	hFE(1)	V_CE=2V, I_C= 0.15 mA	150
	hFE(2)	V_CE= 2V,I_C = 500 mA	340		2000
	hFE(3)	V_CE=2V, I_C = 2A	150
Collector-emitter saturation voltage	VCE(sat)	I_C=3000mA,I_B=100 mA			0.35	V
Transition frequency	f_T	V_CE=6V, I_C=50mA,f=30MHz		150		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	T	V
Range	340-600	560-950	900-2000

Typical Characteristics

Package Outline Dimensions

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