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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

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Brand Name :	Hua Xuan Yang
Certification :	RoHS、SGS
Price :	Negotiated
Delivery Time :	1 - 2 Weeks
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Model Number :	6G03S

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

6G03S 30V N+P-Channel Enhancement Mode MOSFET

Description

The 6G03S uses advanced trench

technology to provide excellent R_DS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

General Features

N-channel P-channel

N-Channel

V_DS = 30V,I_D =6.5A

R_DS(ON) < 16mΩ@ V_GS=10V

P-Channel

V_DS = -30V,I_D = -7A

R_DS(ON) < 37mΩ @ V_GS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Package Marking and Ordering Information

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

30V N+P-Channel EnhancemeN- Channel Typical Electrical and Thermal Characteristics (Curves)

Product Tags:

n channel mosfet transistor

high current mosfet switch

6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

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