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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

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Brand Name :	Hua Xuan Yang
Certification :	RoHS、SGS
Price :	Negotiated
Delivery Time :	1 - 2 Weeks
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Model Number :	50N06P/T

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET

Product Summary

The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

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logic mosfet switch

mosfet driver using transistor

50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

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