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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

    Buy cheap HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ from wholesalers
     
    Buy cheap HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ from wholesalers
    • Buy cheap HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ from wholesalers

    HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : HXY4406A
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    HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

    60V N-Channel AlphaSGT HXY4264

    Product Summary


    VDS30V
    ID (at VGS=10V)13A
    RDS(ON) (at VGS=10V)< 11.5mΩ
    RDS(ON) (at VGS = 4.5V)< 15.5mΩ

    General Description


    The HXY4406A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS andgeneral purpose applications.



    Electrical Characteristics (T =25°C unless otherwise noted)


    A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

    value in any given application depends on the user's specific board design.

    B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

    C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

    initialT =25°C.

    D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

    E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

    F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

    2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

    G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.


    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS



    HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

    Quality HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) &lt; 11.5mΩ for sale
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