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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

    Buy cheap HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise from wholesalers
     
    Buy cheap HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise from wholesalers
    • Buy cheap HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise from wholesalers

    HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : HXY4466
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    HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

    60V N-Channel AlphaSGT HXY4264

    Product Summary


    VDS30V
    I = 10AVGS = 10V)
    RDS(ON) < 23mΩ(VGS = 10V)
    RDS(ON) < 35mΩ(VGS = 4.5V)


    General Description


    The HXY4466 uses advanced trench technology to

    provide excellent RDS(ON) and low gate charge. This

    device is suitable for use as a load switch or in PWM

    applications. The source leads are separated to allow

    a Kelvin connection to the source, which may be

    used to bypass the source inductance.



    Electrical Characteristics (T =25°C unless otherwise noted)


    A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

    value in any given application depends on the user's specific board design.

    B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

    C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

    initialT =25°C.

    D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

    E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

    F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

    2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

    G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.


    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS



    HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

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