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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

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Name: MMBTA56 NPN Darlington Power Transistor Fast Switching Transistor NPN
Brand: Hua Xuan Yang
Price: 1 USD

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SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN)

FEATURE

l General Purpose Amplifier Applications

Marking :2GM

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-80	V
VCEO	Collector-Emitter Voltage	-80	V
VEBO	Emitter-Base Voltage	-4	V
IC	Collector Current	-500	mA
PC	Collector Power Dissipation	225	mW
RΘJA	Thermal Resistance From Junction To Ambient	555	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-100µA, IE=0	-80			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0	-80			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100µA, IC=0	-4			V
Collector cut-off current	ICBO	VCB=-80V, IE=0			-0.1	µA
Collector cut-off current	ICEO	VCE=-60V, IB=0			-1	µA
Emitter-base breakdown voltage	IEBO	VEB=-4V, IC=0			-0.1	µA
DC current gain	hFE(1)	VCE=-1V, IC=-10mA	100		400
	hFE(2)	VCE=-1V, IC=-100mA	100
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB=-10mA			-0.25	V
Base-emitter voltage	VBE	VCE=-1V, IC=-100mA			-1.2	V
Transition frequency	fT	VCE=-1V,IC=-100mA, f=100MHz	50			MHz

Package Outline Dimensions

Typical Characteristics

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