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TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

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Name: TO2513L Tip Power Transistors B772M PNP VCEO 30V Silicon Material
Brand: Hua Xuan Yang
Price: 1 USD

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TO-251-3L Plastic-Encapsulate Transistors B772M TRANSISTOR (PNP)

FEATURES

Low Speed Switching

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-30	V
VEBO	Emitter-Base Voltage	-6	V
I_C	Collector Current -Continuous	-3	A
P_C	Collector Power Dissipation	1.25	W
RӨJA	Thermal Resistance, junction to Ambient	100	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100μA ,I_E=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= -10mA , I_B=0	-30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= -100μA,I_C=0	-6			V
Collector cut-off current	ICBO	V_CB= -40V, I_E=0			-1	μA
Collector cut-off current	ICEO	V_CE=-30V, I_B=0			-10	μA
Emitter cut-off current	IEBO	V_EB=-6V, I_C=0			-1	μA
DC current gain	hFE	V_CE= -2V, I_C= -1A	60		400
Collector-emitter saturation voltage	VCE(sat)	I_C=-2A, I_B= -0.2A			-0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=-2A, I_B= -0.2A			-1.5	V
Transition frequency	fT	V_CE= -5V, I_C=-0.1A f =10MHz	50	80		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

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